RSQ045N03 transistors rev.a 1/3 4v drive nch mosfet RSQ045N03 z structure z dimensions (unit : mm) silicon n-channel mosfet z features 1) low on-resistance. 2) space saving, small surface mount package (tsmt6). 3) low voltage drive (4v drive). z applications switching z packaging specifications z inner circuit package code taping basic ordering unit (pieces) RSQ045N03 tr 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) 30 150 ? 55 to + 150 20 4.5 18 1.0 18 1.25 z thermal resistance parameter c/w rth(ch-a) symbol limits unit channel to ambient 100 ? mounted on a ceramic board ? each lead has same dimensions tsmt6 abbreviated symbol : ql (1) drain (2) drain (3) gate (4) source (5) drain (6) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (6) (1) (5) (2) (4) (3)
RSQ045N03 transistors rev.a 2/3 z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 av gs =20v, v ds =0v v dd 15v 30 ?? vi d = 1ma, v gs =0v ?? 1 av ds = 30v, v gs =0v 1.0 ? 2.5 v v ds = 10v, i d = 1ma ? 27 38 i d = 4.5a, v gs = 10v ? 36 51 m ? m ? m ? i d = 4.5a, v gs = 4.5v ? 40 56 i d = 4.5a, v gs = 4v 3.5 ?? sv ds = 10v, i d = 4.5a ? 520 ? pf v ds = 10v ? 150 95 ? pf v gs =0v ? 12 ? pf f=1mhz ? 19 ? ns ? 41 ? ns ? 14 ? ns ? 6.8 ? ns ? 1.6 9.5 nc ? 2.3 ? nc v gs = 5v ?? nc i d = 4.5a v dd 15 v i d = 2.25a v gs = 10v r l =6.67 ? r g =10 ? r l =3.33 ? r g =10 ? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v i s = 1.0a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions z electrical characteristic curves 0.0 0.5 1.0 1.5 2.5 3.5 2.0 3.0 4.0 gate-source voltage: v gs (v) 10 0.001 0.01 0.1 1 drain current : i d (a) fig.1 typical transfer characteristics v ds =10v pulsed ta=125 c 75 c 25 c ? 25 c drain current : i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) fig.2 static drain-source on-state resistance vs. drain current ( ) 0.1 1 10 1 10 100 1000 v gs =10v v gs =4.5v v gs =4.0v ta = 25 c pulsed 0.1 1 10 drain current : i d (a) 1 10 100 1000 static drain-source on-state resistance : r ds (on) ( m ? ) fig.3 static drain-source on-state resistance vs. drain current ( ? ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 10v pulsed
RSQ045N03 transistors rev.a 3/3 0.1 1 10 drain current : i d (a) 1 10 100 1000 static drain-source on-state resistance : r ds (on) ( m ? ) fig.4 static drain-source on-state resistance vs. drain current ( ?? ) ? 25 c 25 c 75 c ta = 125 c v gs = 4.5v pulsed 0.1 1 10 drain current : i d (a) 1 10 100 1000 static drain-source on-state resistance : r ds (on) ( m ? ) fig.5 static drain-source on-state resistance vs. drain current ( v ) ? 25 c 25 c 75 c ta = 125 c v gs = 4.0v pulsed 02468101214 gate-source voltage : v gs (v) 0 200 50 100 150 static drain-source on-state resistance : r ds (on) ( m ? ) fig.6 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d = 4.5a i d = 2.25a 0.0 0.5 1.0 1.5 source-drain voltage : v sd (v) 0.01 0.1 1 10 source current : i s (a) fig.7 source current vs. source-drain voltage v gs = 0v pulsed ? 25 c 25 c 75 c ta = 125 c 0.01 0.1 1 10 100 10 100 capacitance : c (pf) 1000 10000 drain-source voltage : v ds (v) fig.8 typical capacitance vs. drain-source voltage ciss coss crss ta=25 c f=1mhz v gs =0v 0.01 0.1 1 10 drain current : i d (a) 1 10 100 switching time : t (ns) 1000 fig.9 switching characteristics t r t f t d (off) t d (on) ta=25 c v dd =15v v gs =10v r g =10 ? pulsed 04 268101214 total gate charge : qg (nc) 0 1 2 3 4 5 6 7 8 9 10 gate-source voltage : v gs (v) fig.10 dynamic input characteristics ta = 25 c v dd = 15v i d = 7.5a r g = 10 ? pulsed
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2007 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21, saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
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